 |
|
| If you can't view the Datasheet, Please click here to try to view without PDF Reader . |
|
|
|
| If you can't view the Datasheet, Please click here to try to view without PDF Reader . |
|
|
| Datasheet File OCR Text: |
| MITSUBISHI SEMICONDUCTOR PRELIMINARY Notice : This is not a final specification Some parametric limits are subject to change. MGFC4419G InGaAs HEMT Chip OUTLINE DRAWING DESCRIPTION The MGFC4419G low-noise HEMT(High electron Mobility Transistor) is designed for use in X to K band amplifiers. FEATURES (TARGET) Low noise figure NFmin,=0.5 dB (MAX.) High associated gain Gs=12.0 dB (MIN.) @ f=12GHz @ f=12GHz APPLICATION X to K band amplifiers. RECOMMENDED BIAS CONDITIONS VDS=2V , ID=10mA Refer to Bias Procedure ABSOLUTE MAXIMUM RATINGS Symbol VGDO VGSO ID PT Tch Tstg Parameter Gate to drain voltage Gate to source voltage Drain current Total power dissipation Channel temperature Storage temperature ( Ta=25C ) < Keep safety first in your circuit designs! > Ratings -4 -4 60 50 125 -65 ~ +125 Unit V V mA mW C C Mitsubishi Electric Corporation puts the maximum effort into making semiconductor products better and more reliable, but there is always the possibility that trouble may occur with them.Trouble with semiconductors may lead to personal injury, fire or property damage. Remember to give due consideration to safety when making your circuit designs, with appropriate measures such as (i)placement of substitutive, auxiliary circuits, (ii)use of non-flammable material or (iii)prevention against any malfunction or mishap. ELECTRICAL CHARACTERISTICS Symbol V(BR)GDO IGSS IDSS VGS (off) gm Gs NFmin Parameter Gate to drain breakdown voltage Gate to source leakage current Saturated drain current Gate to Source cut-off voltage Transconductance Associated gain Minimum noise figure ( Ta=25C ) Test conditions IG= -10A VGS=2V, VDS=0V VDS=2V, VGS=0V VDS=2V, ID=500A VDS=2V, ID=10mA VDS=2V, ID=10mA f=12GHz Limits Min. -3 -- -- -0.1 -- 12 -- Typ. -- -- -- -- 75 13.5 -- Max -- 50 60 -1.5 -- -- 0.5 Unit V A mA V mS dB dB MITSUBISHI ELECTRIC as of Jan.'98 (1/4) MITSUBISHI SEMICONDUCTOR PRELIMINARY Notice : This is not a final specification Some parametric limits are subject to change. MGFC4419G InGaAs HEMT Chip Typical Characteristics MITSUBISHI ELECTRIC as of Jan.'98 (2/4) MITSUBISHI SEMICONDUCTOR PRELIMINARY Notice : This is not a final specification Some parametric limits are subject to change. MGFC4419G InGaAs HEMT Chip Typical Characteristics S Parameters (Ta=25 deg.C , VDS=2V , ID=10mA ) f (GHz) 1 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 18 19 20 21 22 23 24 25 26 Magn. 0.994 0.976 0.950 0.917 0.880 0.842 0.805 0.771 0.739 0.711 0.687 0.666 0.648 0.634 0.622 0.613 0.607 0.603 0.600 0.600 0.601 0.603 0.606 0.610 0.616 0.621 S11 Angle -12.2 -24.3 -36.0 -47.3 -58.1 -68.4 -78.2 -87.6 -96.5 -104.9 -113.1 -120.9 -128.3 -135.5 -142.3 -148.9 -155.2 -161.3 -167.0 -172.6 -177.9 177.0 172.2 167.5 163.0 158.7 Magn. 5.908 5.790 5.608 5.380 5.123 4.854 4.585 4.324 4.076 3.843 3.626 3.426 3.241 3.071 2.914 2.770 2.636 2.513 2.398 2.292 2.193 2.100 2.013 1.931 1.855 1.782 S21 Angle 169.6 159.4 149.5 140.0 131.1 122.7 114.8 107.3 100.3 93.7 87.4 81.4 75.7 70.2 64.9 59.8 54.8 50.0 45.3 40.7 36.3 31.9 27.7 23.5 19.4 15.4 Magn. 0.019 0.037 0.054 0.069 0.083 0.094 0.103 0.111 0.117 0.122 0.127 0.130 0.133 0.136 0.138 0.139 0.141 0.143 0.144 0.145 0.146 0.148 0.149 0.151 0.152 0.154 S12 Angle 82.3 74.9 67.7 61.1 54.9 49.3 44.2 39.6 35.4 31.7 28.3 25.3 22.5 20.0 17.7 15.6 13.8 12.0 10.5 9.0 7.7 6.4 5.3 4.2 3.1 2.1 Magn. 0.660 0.645 0.623 0.595 0.564 0.531 0.498 0.466 0.436 0.407 0.381 0.357 0.335 0.316 0.298 0.283 0.270 0.259 0.250 0.243 0.238 0.235 0.234 0.235 0.238 0.242 S22 Angle -8.9 -17.6 -26.0 -34.0 -41.6 -48.7 -55.5 -61.9 -68.1 -74.1 -79.9 -85.6 -91.4 -97.2 -103.0 -109.0 -115.1 -121.4 -127.8 -134.3 -140.9 -147.5 -154.1 -160.6 -166.9 -173.0 MSG/MAG (dB) 24.9 21.9 20.1 18.9 17.9 17.1 16.5 15.9 15.4 15.0 14.6 14.2 13.9 13.6 13.3 13.0 12.7 12.5 12.2 12.0 11.8 11.5 10.8 10.1 9.7 9.3 0.017 0.038 0.065 0.100 0.143 0.192 0.246 0.304 0.364 0.425 0.486 0.546 0.604 0.660 0.713 0.763 0.810 0.853 0.892 0.927 0.958 0.984 1.006 1.024 1.037 1.045 K Noise Parameters (Ta=25 deg.C , VDS=2V , ID=10mA ) f (GHz) 4 8 12 18 22 26 Magn. 0.71 0.62 0.55 0.48 0.45 0.45 Gopt. Angle 33.0 61.1 87.0 123.8 148.1 173.2 Rn (W) 18.0 14.6 12.2 10.3 11.0 12.4 NFmin. (dB) 0.24 0.35 0.45 0.63 0.78 0.98 Gs (dB) 18.3 15.9 13.5 9.9 7.5 5.1 MITSUBISHI ELECTRIC as of Jan.'98 (3/4) MITSUBISHI SEMICONDUCTOR PRELIMINARY Notice : This is not a final specification Some parametric limits are subject to change. MGFC4419G InGaAs HEMT Chip TECHNICAL NOTE 1. Characteristics and quality assurance 1.1 Electrical characteristics a. DC characteristics on spec. sheet show the test conditions and values using wafer-prober. DC characteristics are tested 100% devices. b. RF characteristics are tested using the corresponding packaged FET. When more than 80% 0f the samples satisfy the value of RF characteristics on spec. sheet , that wafer is accepted for shipment. 1.2 Quality assurance and reliability a. Mechanical characteristics are tested using corresponding package with sampling test. b. Visual inspection is complied with MITSUBISHI's technical note. c. The electrical characteristics and the quality assurance test are sampling test. And so the shipped chips are contained some sub-standard articles. d. After opening the packing , the quality of chips are influenced with storage conditions. Our recommended storage conditions and period is as follows: Ta=253 deg.C MITSUBISHI's packing + Desiccator Opened packing + Desiccator 6 months 2 months In the desiccator , leave the chips in the pack keeping up-side-up and store in a clean and dry enviroment , preferable dry N2. e. Packing quantity Standard : 400 pcs. or 50 pcs. / each waffle pack Custom order : 25~400 pcs. / each waffle pack by 25 pcs. step In case of long storage exceeding 2 months at customer after opening the packing , total quantity of order shall be separated and small unit quantity of each orders shall be custome ordered. In this case , we may prepare special spec. No. for each customer. (ex . -21,-22 ) 1.3 Others The device shall not be returned in the following case. a. Inadequate storage b. Mishandling c. Incorrect die/wire bonding d. RF characteristics failure rate less than 30%. Table.1. Standard specifications 2. Ordering information Spec.No. Visual Grade Unit quantity for The classification with Visual grade & packing quantity is listed in Table.1. each waffle packe -A01 -A02 -A03 -A11 -A12 -A13 A B C A B C 25 pcs 400 pcs MITSUBISHI ELECTRIC as of Jan.'98 (4/4) MITSUBISHI SEMICONDUCTOR PRELIMINARY Notice : This is not a final specification Some parametric limits are subject to change. MGFC4419G InGaAs HEMT Chip S Parameters for MGFC4419G (Simulated Value) (Conditions:VDS=2V,IDS=10mA,Ta=25C) f (GHz) 1 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 18 19 20 21 22 23 24 25 26 27 28 29 30 31 32 33 34 35 36 37 38 39 40 S11 Magn. 0.994 0.977 0.951 0.918 0.882 0.844 0.808 0.773 0.742 0.713 0.688 0.667 0.649 0.634 0.623 0.614 0.607 0.603 0.600 0.599 0.600 0.602 0.606 0.610 0.615 0.621 0.627 0.634 0.641 0.649 0.657 0.664 0.672 0.680 0.688 0.696 0.703 0.710 0.717 0.724 Angle -12.1 -24.1 -35.8 -47.0 -57.8 -68.1 -77.9 -87.2 -96.2 -104.7 -112.9 -120.7 -128.2 -135.4 -142.4 -149.0 -155.4 -161.5 -167.3 -172.9 -178.3 176.6 171.7 167.0 162.5 158.2 154.0 150.1 146.3 142.6 139.1 135.8 132.5 129.4 126.4 123.4 120.6 117.9 115.3 112.8 Magn. 5.823 5.709 5.534 5.314 5.066 4.804 4.542 4.286 4.043 3.813 3.599 3.401 3.218 3.049 2.893 2.750 2.616 2.493 2.379 2.272 2.173 2.080 1.993 1.911 1.833 1.760 1.691 1.626 1.564 1.504 1.448 1.394 1.343 1.293 1.246 1.201 1.158 1.117 1.078 1.040 S21 Angle 169.7 159.5 149.6 140.2 131.3 122.9 114.9 107.4 100.4 93.7 87.4 81.3 75.6 70.0 64.7 59.5 54.5 49.6 44.9 40.3 35.8 31.4 27.1 22.8 18.7 14.6 10.7 6.8 3.0 -0.8 -4.5 -8.1 -11.6 -15.0 -18.4 -21.7 -24.9 -28.1 -31.2 -34.2 Mag. 0.019 0.037 0.054 0.070 0.083 0.094 0.103 0.111 0.117 0.123 0.127 0.130 0.133 0.135 0.137 0.139 0.140 0.141 0.142 0.143 0.144 0.145 0.146 0.147 0.148 0.150 0.151 0.152 0.154 0.155 0.157 0.159 0.161 0.163 0.166 0.168 0.170 0.173 0.175 0.178 S12 Angle 82.3 74.8 67.5 60.8 54.5 48.8 43.5 38.8 34.5 30.6 27.0 23.8 20.9 18.2 15.8 13.5 11.5 9.6 7.9 6.3 4.9 3.5 2.2 1.1 -0.1 -1.1 -2.1 -3.1 -4.1 -5.1 -6.0 -7.0 -8.0 -9.0 -10.0 -11.0 -12.1 -13.2 -14.3 -15.4 Mag. 0.666 0.652 0.630 0.602 0.570 0.536 0.502 0.469 0.438 0.408 0.380 0.355 0.332 0.311 0.293 0.277 0.263 0.251 0.242 0.235 0.230 0.227 0.227 0.228 0.232 0.237 0.243 0.251 0.261 0.271 0.281 0.293 0.305 0.317 0.330 0.343 0.356 0.369 0.382 0.394 S22 Angle -8.8 -17.4 -25.7 -33.7 -41.2 -48.3 -55.1 -61.6 -67.7 -73.7 -79.6 -85.5 -91.3 -97.3 -103.4 -109.6 -116.0 -122.6 -129.4 -136.3 -143.3 -150.4 -157.3 -164.2 -170.8 -177.2 176.8 171.0 165.6 160.5 155.7 151.1 146.9 142.8 139.0 135.4 132.0 128.7 125.6 122.6 K 0.05 0.10 0.16 0.21 0.26 0.31 0.36 0.41 0.46 0.51 0.56 0.61 0.66 0.71 0.75 0.80 0.84 0.88 0.92 0.95 0.99 1.02 1.04 1.07 1.09 1.11 1.13 1.14 1.15 1.15 1.16 1.16 1.16 1.15 1.15 1.14 1.13 1.12 1.11 1.10 GMAX (dB) 24.8 21.8 20.1 18.8 17.9 17.1 16.4 15.9 15.4 14.9 14.5 14.2 13.8 13.5 13.2 13.0 12.7 12.5 12.2 12.0 11.8 10.8 10.1 9.5 9.1 8.7 8.3 8.0 7.7 7.5 7.2 7.0 6.8 6.6 6.4 6.3 6.1 6.0 5.8 5.7 MITSUBISHI ELECTRIC as of Jan.'98 |
Price & Availability of MGFC4419G
 |
|
|
|
|
All Rights Reserved © IC-ON-LINE 2003 - 2022 |
| [Add Bookmark] [Contact Us] [Link exchange] [Privacy policy] |
|
Mirror Sites : [www.datasheet.hk]
[www.maxim4u.com] [www.ic-on-line.cn]
[www.ic-on-line.com] [www.ic-on-line.net]
[www.alldatasheet.com.cn]
[www.gdcy.com]
[www.gdcy.net] |